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一种带保护电路的低功耗LDO
引用本文:杨利君,陈治明,龚正,石寅.一种带保护电路的低功耗LDO[J].西安理工大学学报,2011(3):261-265.
作者姓名:杨利君  陈治明  龚正  石寅
作者单位:西安理工大学自动化与信息工程学院;苏州中科半导体集成技术研发中心;
基金项目:国家高技术研究发展计划(863计划)基金资助项目(2009AA011610)
摘    要:为了保护芯片不受电源电压起伏的影响,设计了一种应用于移动多媒体广播(CMMB)的带保护电路的低功耗低压降线性调节器(LDO);为了保证LDO的反馈环路在所有负载电流下均稳定,采用低增益、低输出阻抗的buffer来驱动输出管,使环路的相位裕度都高于40°;为了避免输出管在过流和过热时损坏,设计了过流保护电路和过热保护电路:过流保护电路将过载的电流限制在150 mA;过热保护电路包含滞回功能,在温度高于145℃时,过热保护电路将LDO关断,当温度低于125℃时,LDO重新打开。LDO的输入电压范围为1.5~3.3 V,输出电压为1.2 V。LDO采用0.35μm CMOS工艺设计,共消耗30μA的静态电流,最大负载电流为80 mA。芯片面积为380.2μm×198μm。

关 键 词:低压降线性调节器  过流保护电路  过热保护电路  相位裕度

A Low Power Low Dropout Regulator with Protection Circuits
YANG Lijun,CHEN Zhiming,GONG Zheng,SHI Yin.A Low Power Low Dropout Regulator with Protection Circuits[J].Journal of Xi'an University of Technology,2011(3):261-265.
Authors:YANG Lijun    CHEN Zhiming  GONG Zheng  SHI Yin
Institution:YANG Lijun1,2,CHEN Zhiming1,GONG Zheng2,SHI Yin2 (1.Faculty of Automation and Information Engineering,Xi'an University of Technology,Xi'an 710048,China,2.Suzhou-CAS Semiconductors Integrated Technology Research Center,Suzhou 215021,China)
Abstract:This paper presents a low power low dropout regulator(LDO) with protection circuits which shield a chip from fluctuations in supply rails for CMMB application.By employing a low gain low output impedance buffer to drive the gate node of the pass device,phase margin with over 40° is achieved under any load current conditions.To avoid destroy the pass device by the over current and over temperature,the over current protection(OCP) circuit which limits the maximum load current at 150 mA,and the over temperature protection(OTP) circuit which turns off the LDO when the temperature is higher than 145℃,and turns on the LDO when the temperature is lower than 125℃ are designed.The input voltage range is 1.5~3.3 V,and the output voltage is 1.2 V.The LDO with protection circuits has been implemented in a 0.35 μm CMOS process.It dissipates only 30 μA quiescent current at no load condition and is able to deliver up to 80 mA maximum load current.The chip area of the LDO is 380.2 μm×198 μm.
Keywords:low dropout regulator(LDO)  over current protection(OCP) circuit  over temperature protection(OTP) circuit  phase margin(PM)  
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