| 电子器件劣化的物理特性分析 |
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| 引用本文： | 林建斌,林来金.电子器件劣化的物理特性分析[J].华侨大学学报(自然科学版),1997,18(3):238-242. |
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| 作者姓名： | 林建斌 林来金 |
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| 作者单位： | 华侨大学电气技术系!泉州，362011 |
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| 摘 要： | 从理化角度讨论电子器件产生劣化与故障的原因和后果，提出防止或减少电子器件劣化的设施，促使电子器件按规范要求正常运行，有效地发挥其固有功能并延长使用寿命。
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| 关 键 词： | 电子器件 隧道效应 劣化 故障 物理特性 |
Degradation of Electronic Device as Shown by the Analysis of Its Physical Character |
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| Lin Jianbin,Lin Laijin.Degradation of Electronic Device as Shown by the Analysis of Its Physical Character[J].Journal of Huaqiao University(Natural Science),1997,18(3):238-242. |
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| Authors: | Lin Jianbin Lin Laijin |
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| Abstract: | The causality of the degradation of electronic device is discussed from the angle of physical characteristic ahalysis. Countering various faults arising from degradation and their serious consequences, the authors put forward some facilities to prevent and reduce them. By these facilities, the electronic device will operate normally in accordance with the standard and it will exercise its inherent function even more effectively and its length of life will be prolonged. |
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| Keywords: | electronic device semiconductor device degradation |
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