| 用L-B膜实现MIS结构的C-V特性研究 |
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| 引用本文： | 沈潮,张学敏,冀文芝,宫明宣,张亮,李铁津.用L-B膜实现MIS结构的C-V特性研究[J].佳木斯大学学报,1997(2). |
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| 作者姓名： | 沈潮 张学敏 冀文芝 宫明宣 张亮 李铁津 |
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| 作者单位： | 佳木斯工学院!154007，吉林大学，吉林大学 |
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| 摘 要： | 测定了多种具有金属／L－B膜绝缘层／半导体（Si）结构的纳米厚度有机功能膜的C－V特性．研究发现C－V特性受到L－B膜的分子组分和氧化膜厚度的影响．
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| 关 键 词： | L－B膜 金属／L—B膜／Si夹心结构 C－V特性 |
RESEARCH ON C-V PROPERTY OF MIS STRUCTURE ARE DONE BY L-B FILM |
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| Shag Chao, Zhang Xuemin, Ji Wenzhi, Gong Mingxuan.RESEARCH ON C-V PROPERTY OF MIS STRUCTURE ARE DONE BY L-B FILM[J].Journal of Jiamusi University(Natural Science Edition),1997(2). |
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| Authors: | Shag Chao Zhang Xuemin Ji Wenzhi Gong Mingxuan |
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| Institution: | Jiamusi Institute of Technolgy Basic Course Department 154007 |
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| Abstract: | C-V property of organic function am is measured for some kinds of laminanted-layer structure of metal. L-B film insulation layer and semiconductor with nanometer thickness. It is found that C-V property is aff ected by molecular-organization composition and oxygenated film thickness. |
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| Keywords: | L-B film metal/L-B film/Si laminated-layer structure C-V property |
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