| 硅、锗中硼、磷杂质的振动特性 |
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| 摘 要： | 本文用六原子模型．分析丁硼、磷原子在硅、锗半导体中刃位错附近的三维振动特性．
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| 关 键 词： | 位错，矩阵方程，特征值 |
The Vibration Property of Boron or Phosphrus as Impurity in Solicon or Germanium |
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| Fan Liru, Ouyang Wu. The Vibration Property of Boron or Phosphrus as Impurity in Solicon or Germanium[J]. Journal of Yanshan University, 1995, 0(2) |
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| Authors: | Fan Liru Ouyang Wu |
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| Affiliation: | Dept. of Basic Set. |
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| Abstract: | This paper analyzed the property of atom of boron and phosphorus vibrating in three dimesions near the edge dislocation in semiconductor of silicon or germanium with model of six-atoms. |
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| Keywords: | dislocation matrix characteristic value |
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