| 基于阈值电压的IGBT芯片疲劳失效模型 |
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| 引用本文： | 李游,曹继伟,郝光耀,闫戈,刘虹晓.基于阈值电压的IGBT芯片疲劳失效模型[J].应用科学学报,2021,40(5):865-875. |
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| 作者姓名： | 李游 曹继伟 郝光耀 闫戈 刘虹晓 |
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| 作者单位： | 1. 中国船舶工业综合技术经济研究院 质量与可靠性中心, 北京 100081;2. 哈尔滨工业大学 电气工程及自动化学院, 黑龙江 哈尔滨 150001 |
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| 摘 要： | 为了实现对IGBT期间在全生命周期内的健康状态进行有效评估，基于半导体物理理论，研究了IGBT芯片疲劳失效机理，分析了IGBT栅极界面电荷密度对阈值电压的影响。以阈值电压作为IGBT的失效特征量，在研究阈值电压随疲劳失效时间变化规律的基础上，建立IGBT芯片疲劳失效失效模型。搭建了IGBT阈值电压测试测试平台，通过IGBT老化实验验证本文所提出的模型可以较为准确地表征和估算IGBT中的芯片老化程度，验证了失效模型的正确性和合理性。
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| 关 键 词： | 绝缘栅双极型晶体管 芯片疲劳失效 阈值电压 失效机理 寿命评估 |
| 收稿时间： | 2021-11-26 |
Fatigue Failure Model of IGBT Chip Based on Threshold Voltage |
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| LI You,CAO Jiwei,HAO Guangyao,YAN Ge,LIU Hongxiao.Fatigue Failure Model of IGBT Chip Based on Threshold Voltage[J].Journal of Applied Sciences,2021,40(5):865-875. |
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| Authors: | LI You CAO Jiwei HAO Guangyao YAN Ge LIU Hongxiao |
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| Institution: | 1. Center for Quality and Reliability, China Institute of Marine Technology & Economy, Beijing 100081, China;2. School of Electrical Engineering and Automation, Harbin Institute of Technology University, Harbin 150001, Heilongjiang, China |
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| Abstract: | In order to effectively evaluate the health status of IGBT during its whole life cycle, the fatigue failure mechanism of IGBT chip was studied based on the theory of semiconductor physics, and the effect of charge density at gate interface on threshold voltage was analyzed. Taking the threshold voltage as the failure characteristic quantity of IGBT, the fatigue failure model of IGBT chip was established on the basis of studying the change rule of threshold voltage with fatigue failure time. An IGBT threshold voltage test platform was built, and IGBT aging experiments were performed to verify that the model proposed in this paper can accurately characterize and estimate the aging degree of IGBT chips, and the correctness and rationality of the failure model were verified. |
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| Keywords: | insulated gate bipolar transistor chip fatigue failure threshold voltage failure mechanism life evaluation |
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