Au—Si界面的室温反应

本文利用XPS研究了在超高真空条件下形成的Au—Si(113)界面初始阶段的室温反应,测量了Si2p、2S和Au4f光电子发射峰的强度和能量位置随Au复盖量的变化。所有的结果都表明,与Au—Si(111)和Au—Si(100)系统一样,存在一个发生界面室温反应的临界Au厚度～5ML,从而推断,这个现象可能是Au—Si界面形成过程的普遍特性。根据我们的实验结果,还讨论了Au—Si界面形成的可能模型。

Room Temperature Reaction of Au-Si Interface

With the use of X—ray photoemission spectroacopy(XPS), the initial stage reaction of Au-Si(113) interface formed under the condition of ultrahigh vacuum was studied at room temperature. The binding energies and photoemission intensities of Si 2p, 2s and Au4f were measured as a function of the Au coverage. Our experiments have shown that for Au—film to reaot with Si at room temperature, its thickness must exceed a critical value of about 5 monolayers. Considerring the similar results of Au—Si(111) and Au—Si(100) systems.we deduced that the presence of the critical Au thickness is common to the formation of the Au-Si interface. The possible models of Au-Si interface are also discussed.