| 高压CMOS管工艺的设计、模拟和验证 |
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| 引用本文： | 吴瑞,黄飞鸿,郑国祥,宗祥福.高压CMOS管工艺的设计、模拟和验证[J].复旦学报(自然科学版),2002,41(2):145-150. |
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| 作者姓名： | 吴瑞 黄飞鸿 郑国祥 宗祥福 |
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| 作者单位： | 1. 复旦大学材料科学系,上海,200433;先进半导体制造有限公司,上海,200233
2. 复旦大学材料科学系,上海,200433 |
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| 摘 要： | 模拟和验证了一种低成本的，以标准CMOS工艺为基础，无需对原工艺流程进行改动的高压工艺技术。讨论了低压器件中的各种击穿机理，相应提出了高压器件中所做出的改进，列举了该工艺技术中所用的特殊版图；对此工艺的应用性进行了二维的工艺和器件模拟；将模拟结果与实际测试结果进行了比较，验证了这种高压工艺技术的实用性。
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| 关 键 词： | 高压CMOS管 工艺 设计 模拟 验证 SVX工艺技术 拐角击穿 场板 集成电路 |
| 文章编号： | 0427-7104(2002)02-0145-06 |
The Simulation and Verification of the Technique for High-Voltage CMOS |
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| WU Rui ,HUANG Fei hong ,ZHENG Guo xiang ,ZONG Xiang fu.The Simulation and Verification of the Technique for High-Voltage CMOS[J].Journal of Fudan University(Natural Science),2002,41(2):145-150. |
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| Authors: | WU Rui HUANG Fei hong ZHENG Guo xiang ZONG Xiang fu |
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| Institution: | WU Rui 1,2,HUANG Fei hong 1,ZHENG Guo xiang 1,ZONG Xiang fu 1 |
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| Abstract: | A cost effective high voltage technique based on standard CMOS technology to extend the operation voltage of the devices without any modification of the present process routine is simulated and verified in this paper. First, the different breakdown mechanisms of LV devices are discussed. Then the accordingly required technological improvement for the HV devices and special layout rules adopted for this technique are presented. Then the applicability of the technique is simulated by the two dimensional process and device simulator. Finally, the simulated data are compared with the measured ones, which shows that the proposed high voltage technique is applicable. |
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| Keywords: | SVX technique corner breakdown field plate lightly doped drain |
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