用DLTS技术研究MNOS结构界面陷阱

提出利用深能级瞬态谱技术ＭＮＯＳ结构中界面陷阱的分布，阐述了并建立了ＭＮＯＳ结构ＤＬＴＳ存储峰和界面态峰的解析理论，并给出区分这两个谱峰的实验方法，并研制的ＭＯＮＳ结构进行的ＤＬＴＳ描述了理论结果，所获得的存储陷阱和界面态的分布规律与应用热少许电流谱和保留特性方法交

Study on interface trap distributions of MNOS structures using DLTS technique

DLTS technique is suggested to research the interface trap distributions in MNOS structures.A new analytical theory corresponding to memory trap and interface state peaks in DLTS has been derived for MNOS structures,and memory trap peak is distinguished from interface state peak experimentally. The theoretical results are in good agreement with the DLTS spectra obtained by measuring our fabricated MNOS samples. We have also determined the density distributions of memory trap and interface state in MNOS structures,and the results agree with the cases investigated by the intersecting measurements of TSC and Retention Characteristics. Furthermore,this theory can also be applied to MIS devices with other traps.