| 基于Mo/SiO2布拉格声反射器的体声波谐振器的制备及其性能分析 |
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| 引用本文： | 谢红,熊娟,杜鹏飞,钟伟明,秦杰,顾豪爽.基于Mo/SiO2布拉格声反射器的体声波谐振器的制备及其性能分析[J].湖北大学学报(自然科学版),2012,34(2):138-141. |
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| 作者姓名： | 谢红 熊娟 杜鹏飞 钟伟明 秦杰 顾豪爽 |
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| 作者单位： | 湖北大学物理学与电子技术学院,湖北武汉,430062 |
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| 摘 要： | 采用射频反应磁控溅射法在p型(100)单晶硅衬底上交替沉积Mo/SiO2薄膜作为布拉格声学反射层,通过原子力显微镜(AFM)及扫描电子显微镜(SEM)分别表征声反射层薄膜的表面和截面形貌,研究溅射工艺条件对SiO2薄膜微观形貌的影响.采用MEMS工艺流程制备基于c轴择优取向AlN压电薄膜的SMR型谐振器.并对谐振器的S11参数进行测试分析,得到谐振器的中心频率为1.7 GHz,表明实验所制备的SMR型谐振器在质量传感方面具有一定的应用前景.
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| 关 键 词： | 磁控溅射 Mo/SiO2声反射器 SMR型谐振器 AlN薄膜 |
Preparation and performance analysis of bulk acoustic resonator based on Mo/SiO2 acoustic bragg reflector |
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| XIE Hong
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XIONG Juan
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DU Pengfei
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ZHONG Weiming
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QIN Jie
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GU Haoshuang.Preparation and performance analysis of bulk acoustic resonator based on Mo/SiO2 acoustic bragg reflector[J].Journal of Hubei University(Natural Science Edition),2012,34(2):138-141. |
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| Authors: | XIE Hong XIONG Juan DU Pengfei ZHONG Weiming QIN Jie GU Haoshuang |
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| Institution: | (School of Physics and Electronic Technology,Hubei University,Wuhan 430062,China) |
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| Abstract: | RF reactive magnetron sputtering was adopted alternately depositing Mo/SiO2 film as an acoustic Bragg reflector on p-type(100) silicon substrate.Surface and cross-sectional morphologies were characterized by XRD,SEM technologies respectively.The relationship between microstructure of SiO2 film and sputtering conditions were analyzed.Furthermore,MEMS processes were adopted preparing c-axis preferred oriented AlN piezoelectric films-based SMR resonator used for mass sensing.S11 parameter of the device was tested and the center frequency appeared at 1.7 GHz,which suggested that the SMR we prepared would have a good application prospect in mass sensing field. |
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| Keywords: | magnetron sputtering Mo/SiO2 acoustic reflector SMR resonator AlN thin film |
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