| 甚高频对微晶硅薄膜微观结构的影响 |
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| 引用本文： | 卢景霄,文书堂,郭学军,李瑞,张磊.甚高频对微晶硅薄膜微观结构的影响[J].郑州大学学报(理学版),2008,40(2). |
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| 作者姓名： | 卢景霄 文书堂 郭学军 李瑞 张磊 |
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| 作者单位： | 郑州大学教育部材料物理重点实验室,郑州,450052 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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河南省教育厅自然科学基金 |
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| 摘 要： | 系统研究了射频和甚高频下沉积微晶硅薄膜时沉积参数对薄膜质量的影响，并优化了沉积参数．在相同的沉积条件下，甚高频沉积速度明显大于射频沉积速度，并且制备出的太阳能电池效率同样高于射频沉积．一般情况下，当沉积速率提高时，沉积薄膜中存在大量悬挂键和Si-2H键等缺陷，会大大降低材料的光电性能，同样也会降低太阳能电池的效率．在保证材料的光电性能的前提下提高沉积速度，沉积参数需要优化．在系列优化沉积参数后，微晶硅沉积速率达到0．75nm／s，在该沉积速率下，制备出的单结n—i—P结构的太阳能电池效率达到5．41％．
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| 关 键 词： | 甚高频化学汽相沉积 高速生长 微晶硅薄膜 太阳能电池 VHF-PECVD high growth rate deposition microcrystalline silicon thin film solar cell 甚高频 微晶硅薄膜 微观结构 影响 Growth Microcrystalline Silicon Ultra High Frequency solar cells initial order cell performance related defects increase efficiency deposition rate similar conditions parameters thin films |
Influence of Ultra High Frequency on Microcrystalline Silicon Growth |
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| LU Jing-xiao,WEN Shu-tang,GUO Xue-jun,LI Rui,ZHANG Lei.Influence of Ultra High Frequency on Microcrystalline Silicon Growth[J].Journal of Zhengzhou University:Natural Science Edition,2008,40(2). |
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| Authors: | LU Jing-xiao WEN Shu-tang GUO Xue-jun LI Rui ZHANG Lei |
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| Abstract: | The deposition parameters of microerystalline thin films by RF-PECVD and VHF-PECVD are systemati- cally studied. Under similar conditions, the deposition rate of μc-Si: H thin films is higher by VHF-PECVD than byRF-PECVD. With deposition rate successively enhanced by VHF-PECVD, μc-Si: H solar cell efficiency is also im-proved. Generally, when deposition rate increases, dangling bonds related defects also increase, which is detrimen-tal to solar cell performance. In order to increase deposition rate while keeping defects low, the deposition parame-ters are thoroughly investigated. Kept the deposition parameters as 0.75 nm/s, μc-Si: H solar cells are also fabrica-ted and an initial efficiency of 5.41% is achieved. |
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| Keywords: | VHF-PECVD high growth rate deposition microcrystalline silicon thin film solar cell |
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