| Zn_(1-x)Co_xO稀磁半导体的XAFS研究 |
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| 作者单位： | 中国科学技术大学国家同步辐射实验室，中国科学技术大学国家同步辐射实验室，中国科学技术大学国家同步辐射实验室，中国科学技术大学国家同步辐射实验室，中国科学技术大学国家同步辐射实验室，中国科学技术大学国家同步辐射实验室，中国科学技术大学物理系，中国科学技术大学国家同步辐射实验室 安徽合肥230029，中国科学技术大学物理系，安徽合肥230026，安徽合肥230029，中国科学技术大学物理系，安徽合肥230026，安徽合肥230029，安徽合肥230029，安徽合肥230029，安徽合肥230029，安徽合肥230026，安徽合肥230029 |
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| 摘 要： | 利用XAFS技术研究溶胶-凝胶法制备的Zn1-xCoxO稀磁半导体材料结构随Co含量(x)的变化.结果表明在低含量的Co掺杂ZnO(x=0.02,0.05)时Co2 离子完全进入ZnO晶格中,替代了Zn2 离子,并且造成了Co2 离子周围局域结构的膨胀.当Co的含量x增加到0.10或更高时,只有一部分的Co2 离子进入晶格,剩余的Co2 和Co3 析出晶格形成Co3O4相.
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| 关 键 词： | XAFS Zn1-xCoxO稀磁半导体 溶胶-凝胶法 |
XAFS study on Zn_(1-x)Co_xO diluted magnetic semiconductor |
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| Authors: | SHI Tong-fei ZHU San-yuan WU Wen-qing ZHANG Guo-bin YAN Wen-sheng SUN Zhi-hu LIU Wen-han WEI Shi-qiang |
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| Institution: | SHI Tong-fei1,2,ZHU San-yuan1,2,WU Wen-qing1,ZHANG Guo-bin1,YAN Wen-sheng1,SUN Zhi-hu1,LIU Wen-han2,WEI Shi-qiang1 |
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| Abstract: | The local structures around Co ions in the Zn1xCoxO nano-composites prepared by sol-gel method were investigated by X-ray absorption fine structure(XAFS) technique.The results indicate that for dilute Co-doped ZnO(x=0.02,0.05),the Co2 ions are incorporated into the ZnO lattice,and are located at the position of the substitutional Zn2 ions,which would result in the expansion of the local structure.As(the Co content) increases to 0.10 or higher,only a part of Co ions enter the lattice of wurtzite,but the others exist in the form of Co3O4 phase,whose content increases with the doped Co concentration. |
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| Keywords: | XAFS Co-doped ZnO sol-gel method |
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