立方氮化硼空间电荷限制肖特基二极管研究

为解决金属/立方氮化硼（c-BN）接触问题, 提出Si掺杂的立方氮化硼单晶的上表面采用Cu,Zn合金探针、 下表面采用Ag浆烧结, 制备一个空间电荷限制肖特基二极管。室温下I V特性实验数据表明, 在10 V时器件的整流比为370。提出了该器件的等效电路模型, 并且结合空间电荷限制电流和热电子发射理论对实验结果进行了分析。结果表明, 正向电流与电压呈现二次幂函数关系。实验测量发现, 该二极管开启电压高达4.2 V, 最高工作温度超过500 ℃。

Space-Charge-Limited Currents in c-BN Schottky Diodes

To solve the the metal/cubic boron nitride （c-BN） contact problem, we put forward the Si doping of cubic boron nitride single crystal on the surface of the Cu-zinc alloy probe, the surface uses the Ag plasma sintering, the preparation of a space charge limited schottky diode. The experimental data showed that the characteristics of I-V at room temperature, the device in DC10 V when the rectification ratio is 370;the positive current and voltage is two times the power function relationship. With the space charge limited current and thermionic emission theory, the experimental results are analyzed, and the equivalent circuit model of the sample device.