| 砷化镓金属—半导体场效应晶体管的二维数值分析 |
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| 引用本文： | 陈贵灿 Wang,KL.砷化镓金属—半导体场效应晶体管的二维数值分析[J].西安交通大学学报,1990,24(1):79-86. |
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| 作者姓名： | 陈贵灿 Wang KL |
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| 作者单位： | 西安交通大学电子系，洛杉矶加州大学电气系，西安交通大学数学系，西安交通大学电子系 |
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| 摘 要： | 本文叙述用有限元方法对工作在导带的 GaAs MESFET's 器件进行二维稳态模拟的程序.用三角形单元不均匀网格剖分的程序,能局部加密,优化结点编码,缩小带宽;对基本方程离散采用改进的电荷浓缩法和有限元——有限差分混合法;方程求解采用藕合法,偏压步长大,计算速度快.
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| 关 键 词： | 场效应晶体管 肖特基势垒栅 砷化镓 |
TWO-DIMENSIONAL STEADY-STATE NUMERICAL ANALYSIS OF GaAs MESFET'S |
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| Chen Guican.TWO-DIMENSIONAL STEADY-STATE NUMERICAL ANALYSIS OF GaAs MESFET''''S[J].Journal of Xi'an Jiaotong University,1990,24(1):79-86. |
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| Authors: | Chen Guican |
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| Abstract: | The two-dimcnsional stcady-state numcrical analysis program for C-band GaAs
MESFET's by finite-etcment method is prcsented in this paper.The local mesh refinement
may be casily utilizcd in GRID program.The assignment of node numbers to the non-con-
tact nodes can be changed rcpeatedly until the differcnce betwcen node numbers is reduccd
to a minimum.The improved charge lumping method and the hybrid finite-clement
finite-diffcrence scheme are used in discretizing the scmiconductor basic cquations.The
Poisson-continuity system is solved by the coupled scheme.Thereby train voltage steps can
be greater and the speed of dcvice analysis is increascd considcrably. |
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| Keywords: | gallium arseide schottky barrier gate fied effect transistors numerical analysis |
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