| 用蒙特卡罗方法计算X射线在酞菁铜与重金属界面的剂量增强系数 |
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| 引用本文： | 赵宝奎,赵广义,周银行,马玉刚,董文斌.用蒙特卡罗方法计算X射线在酞菁铜与重金属界面的剂量增强系数[J].吉林大学学报(理学版),2007,45(3):448-450. |
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| 作者姓名： | 赵宝奎 赵广义 周银行 马玉刚 董文斌 |
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| 作者单位： | 吉林大学 物理学院, 长春 130021 |
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| 摘 要： | 用蒙特卡罗方法计算金-酞菁铜、 钨-酞菁铜和钽-酞菁铜界面的剂量增强系数. 结果表明, 当X射线能量为100~150 keV时, 界面附近酞菁铜一侧存在较大的剂量增强.
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| 关 键 词： | 有机半导体 X射线 剂量增强系数 界面 |
| 文章编号： | 1671-5489(2007)03-0448-03 |
| 收稿时间： | 2006-07-06 |
| 修稿时间： | 2006年7月6日 |
Monte-Carlo Calculation of X-Ray Dose-enhancement-factor Nearby Copper-phthalocyanine Connected High Z Metal Interface |
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| ZHAO Bao-kui,ZHAO Guang-yi,ZHOU Yin-hang,MA Yu-gang,DONG Wen-bin.Monte-Carlo Calculation of X-Ray Dose-enhancement-factor Nearby Copper-phthalocyanine Connected High Z Metal Interface[J].Journal of Jilin University: Sci Ed,2007,45(3):448-450. |
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| Authors: | ZHAO Bao-kui ZHAO Guang-yi ZHOU Yin-hang MA Yu-gang DONG Wen-bin |
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| Institution: | College of Physics, Jilin University, Changchun 130021, China |
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| Abstract: | The dose would be enhanced on the low-Z material side when X-ray enters the interface constructed with two different materials. The dose-enhancement-factors of Au-CuPci,W-CuPc and Ta-CuPc interfaces were calculated via the Monte-Carlo method. The calculated results demonstrate that there exists stronger dose-enhancement on the CuPc side near the interface when the energy of X-ray is between 100 keV and 150 keV. |
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| Keywords: | organic semiconductor X-ray dose-enhancement-factor interface |
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