新型电子清洗工艺对半导体表面的清洗效果

报告了一种新型电子清洗工艺．该工艺采用了被命名为ＤＺ—１和ＤＺ—２的两种新型电子清洗剂分别与９５％体积的去离子水配制成清洗液，先后用超声波清洗．用高频Ｃ—Ｖ测试和原子吸收光谱分析研究了清洗效果．用该工艺清洗过的硅片生长的二氧化硅层中固定电荷密度在１０１０ｃｍ－２数量级；去重金属离子能力与常规ＣＭＯＳ／ＳＯＳ栅氧化工艺相当．新型清洗工艺具有操作简单、价格低廉、且无毒、无腐蚀和对人体无危害、对环境无污染的优点．

A NEW-TYPE ELECTRONIC CLEANING TECHNIQUE FOR CLEANING EFFECT OF THE SEMICONDUCTOR SURFACE

A new type electronic industry cleaning technique is repoited. The new cleaning technique uses two kinds of new cleaning detergents which is named DZ-land DZ-2.In this cleaning technique, DZ-1 and DZ-2 are mixed with 95% volume of deionized water to make a cleaning solution which is used for cleaning with ultrasonic wave respectively. Its cleaning result was investigated by high frequence C-V measurement and the atomic adsorption spectrometry. The fixed charge density of the sillicon dioxide layer of cleaning silicon wafers with the new cleaning technique is of the order 10 10cm-2,the new cleaning technique has the same ability to clean the heavy matallic ions as the common CMOS/SOS cleaning technique. The operation of this technique is simple,its cost is very cheap,it has no toxicity and no corrosiveness,which is harmless to human body ,with no pollution to the environment.