| InP材料UV激光直接刻蚀研究 |
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| 引用本文： | 张玉书,张庆有,任临福,丁涛,石景龙.InP材料UV激光直接刻蚀研究[J].吉林大学学报(理学版),1990(4). |
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| 作者姓名： | 张玉书 张庆有 任临福 丁涛 石景龙 |
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| 作者单位： | 吉林大学电子科学系
(张玉书，张庆有，任临福，丁涛)，吉林大学电子科学系(石景龙) |
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| 摘 要： | 利用UV激光的光解剥离(APD)效应,对半导体材料InP进行了直接刻蚀研究,获得了良好的结果。采用波长为308nm,光脉冲宽度20ns的XeCl)准分子激光器,APD刻蚀的光能量密度阈值为390mJ/cm~2;与理论结果相比较,两者具有良好的一致性。同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
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| 关 键 词： | 准分子激光 光解剥离 光致断键 光能密度阈值 |
Investigation of UV Laser Direct Etching on InP Material |
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| Zhang Yushu,Zhang Qingyou,Ren Linfu,Ding Tao and Shi Jinglong.Investigation of UV Laser Direct Etching on InP Material[J].Journal of Jilin University: Sci Ed,1990(4). |
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| Authors: | Zhang Yushu Zhang Qingyou Ren Linfu Ding Tao and Shi Jinglong |
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| Abstract: | An investigation of direct etching on semiconductor InP by UV laser APD effect has been made and a good result was achieved. The experimental APD fluency threshold is about 390 mJ/cm~2 by an XeCl excimer laser with a wavelength of 308 nm and a pulse width of 20 ns. Compared with the theoretical results, they are coincident well with each other. Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given. |
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| Keywords: | excimer laser ablative photodecomposition bond photo-broken laser fluency threshold |
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