| AlN MOCVD生长模式的密度泛函研究 |
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| 引用本文： | 胡相焱,程锦荣. AlN MOCVD生长模式的密度泛函研究[J]. 安徽大学学报(自然科学版), 2012, 0(5): 43-46 |
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| 作者姓名： | 胡相焱 程锦荣 |
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| 作者单位： | 安徽大学物理与材料科学学院 |
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| 摘 要： | 采用密度泛函理论(density functional theory)和Gaussian03程序包研究AlN MOCVD(metal organic chemical vapor deposition)的生长模式,得到与实验观察相一致的计算结果,给出AlN MOCVD在衬底上生长出单层薄膜后,然后进行的是岛状生长而不是层状生长的理论解释.
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| 关 键 词： | AlN MOCVD 密度泛函理论 生长模式 |
Density functional investigation of aluminium nitride MOCVD growth model |
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| HU Xiang-yan,CHENG Jin-rong. Density functional investigation of aluminium nitride MOCVD growth model[J]. Journal of Anhui University(Natural Sciences), 2012, 0(5): 43-46 |
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| Authors: | HU Xiang-yan CHENG Jin-rong |
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| Affiliation: | *(School of Physics and Material Science,Anhui University,Hefei 230039,China) |
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| Abstract: | DFT(density functional theory) and Gaussian03 software package were adopted to investigate the AlN MOCVD(metal organic chemical vapor deposition) growth mode.The computational results were good in agreement with the experimental observation.The theoretical explanation,that the monolayer film of AIN MOCVD fistly developed on the underlay,then the island growth not layer growth occured,was given. |
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| Keywords: | AlN MOCVD DFT growth mode |
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