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纯钛TA1和钛合金TC4表面固体渗硼
引用本文:李凤华,董梦格,王丽娜,樊占国.纯钛TA1和钛合金TC4表面固体渗硼[J].东北大学学报(自然科学版),2014,35(9):1284-1288.
作者姓名:李凤华  董梦格  王丽娜  樊占国
作者单位:(东北大学 材料与冶金学院, 辽宁 沈阳110819)
基金项目:中央高校基本科研业务费专项资金资助项目(N110402004)
摘    要:采用固体粉末法分别对基体组织为α-Ti的TA1和基体组织为(α+β)-Ti的TC4钛合金表面进行了渗硼,在偏光显微镜和扫描电镜(SEM)下观察了渗层的形貌,用X射线衍射(XRD)分析了渗层的物相组成.实验结果表明,渗硼温度在850~1000℃范围内,TA1表面渗层为平行于基体表面的多层结构,为Ti3O相和TiB相;当渗硼温度高于920℃时TiB为主要组成并出现了TiB2相,且硼钛化合物的含量随温度升高而增加.当渗硼温度低于1000℃时,TC4表面渗层为Ti3O相和TiB相,在渗硼温度高于1000℃时,渗层为TiB2+TiB晶须结构.渗硼温度高于1000℃是TA1和TC4表面形成硼钛化合物的充分条件.

关 键 词:纯钛TA1  钛合金TC4  硼钛化合物  固体渗硼  扩散机理  

Solid Boronizing on the Surface of Pure Titanium TA1 and Titanium Alloy TC4
LI Feng-hua;DONG Meng-ge;WANG Li-na;FAN Zhan-guo.Solid Boronizing on the Surface of Pure Titanium TA1 and Titanium Alloy TC4[J].Journal of Northeastern University(Natural Science),2014,35(9):1284-1288.
Authors:LI Feng-hua;DONG Meng-ge;WANG Li-na;FAN Zhan-guo
Institution:School of Materials & Metallurgy, Northeastern University, Shenyang 110819, China.
Abstract:The solid powder boronizing, on the surface of titanium alloys with matrix structure α Ti of TA1 and(α+β) Ti of TC4, was investigated. The morphology of boride layer was observed by polarizing microscope and scanning electron microscope(SEM). The phase composition of boride layer was analyzed by X ray diffraction(XRD). The results show that when boronizing temperature is in the range of 850~1000℃, diffusion layers on TA1 in a multilayer structure are paralleled to the surface of the substrate, which composes of Ti3O and TiB phases. When the temperature is higher than 920℃, TiB becomes the major component in the diffusion layer with TiB2, and the content of titanium borides increases with temperature. When the temperature is lower than 1000℃, Ti3O and TiB are the major components of the layer on TC4. When it is higher than 1000℃, the layer is TiB2 and TiB whisker. Boronizing temperature above 1000℃ is the sufficient condition for the formation of titanium borides.
Keywords:pure titanium TA1  titanium alloy TC4  titanium boride  solid boronizing  diffusion kinetics  
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