多孔硅的发光

用电化学腐蚀的方法成功地制备出多孔硅系列样品,这种材料具有室温下肉眼可见的红色发光。波段分布在550-900nm之间的带状光谱,半宽度为0.31eV,峰值波长位于700nm附近。随着测量温度的升高,发光峰位兰移,发光强度随温度的变化呈指数变化规律。实验结果表明,多孔硅的发光是局域在量子线上激子的辐射复合。

Luminescence in Porous Silicon

A series of porous silicon samples have been successfully prepared by electrochemical etching technique. We measure the luminescence properties and find that the luminescence is in the visible wavelength region with the spectrum band distributed from 550nm to 900nm. The half width of the band is about 0.31 eV and the peak position is at around 700nm. The peak wavelength of the spectrum shifts to the blue as the sample temperature increases. The intensity of the luminescence changes exponentially with temperature. The results indicate that the luminescence in porous silicon is the radiative recombination of excitons confined in the quantum wire system.