| Nb2O5掺杂及TiO2压敏陶瓷埋烧工艺的研究 |
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| 引用本文： | 朱道云,周方桥,丁志文,梁鸿东.Nb2O5掺杂及TiO2压敏陶瓷埋烧工艺的研究[J].华中科技大学学报(自然科学版),2004,32(2):54-57. |
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| 作者姓名： | 朱道云 周方桥 丁志文 梁鸿东 |
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| 作者单位： | 广州大学,理学院,广东,广州,510405;广州大学,理学院,广东,广州,510405;广州大学,理学院,广东,广州,510405;广州大学,理学院,广东,广州,510405 |
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| 基金项目： | 广州市教育局科技计划资助项目(重点01-2). |
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| 摘 要： | 通过微结构分析、I-V特性及复阻抗频谱的测量，比较了埋烧和传统的裸烧工艺对于Nb^5 掺杂的TiO2压敏陶瓷材料的压敏电压和非线性系数的影响，结果表明掩埋法烧结可以降低该类陶瓷材料的压敏电压和非线性系数；考察了Nb2O5掺杂的作用，表明Nb^5 固溶于TiO2中取代Ti^4 使晶粒半导化．Nb2O5掺杂量对TiO2压敏陶瓷的I-V特性和微观结构都会有影响作用，适量Nb^5 的掺杂有助于晶粒的生长.
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| 关 键 词： | TiO2陶瓷 压敏电阻 电学性能 |
| 文章编号： | 1671-4512(2004)02-0054-04 |
| 修稿时间： | 2003年8月11日 |
The effects of burying sintering process and Nb2O5-doped amounts on the electric properties of TiO2 varistor ceramic |
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| Zhu Daoyun Zhou Fangqiao Ding Zhiwen Liang HongdongPostgraduate, Dept. of Physics,Guangzhou U niv.,Guangzhou ,China..The effects of burying sintering process and Nb2O5-doped amounts on the electric properties of TiO2 varistor ceramic[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,2004,32(2):54-57. |
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| Authors: | Zhu Daoyun Zhou Fangqiao Ding Zhiwen Liang HongdongPostgraduate Dept of Physics Guangzhou U niv Guangzhou China |
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| Institution: | Zhu Daoyun Zhou Fangqiao Ding Zhiwen Liang HongdongPostgraduate, Dept. of Physics,Guangzhou U niv.,Guangzhou 510405,China. |
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| Abstract: | By microstructure analysis, I-V characteristic and c om plex impedance spectra measurement, the effects of burying sintering were compar ed with those of the traditional sintering process on breakthrough-voltage and nonlinear exponent of Nb 5+ -doped TiO 2-based ceramic materials. The res ults showed that the burying sintering method could make the breakthrough-volta ge and nonlinear exponent smaller. The roles of Nb 2O 5 dopant in the TiO 2 v aristor ceramic were also investigated. The results revealed that Nb 5+ dis solved into TiO 2 grains to substitute Ti 4+ for enhancing ceramic semicon ductivity behavior. The amount of Nb 2O 5 dopant influenced I-V characterist ic and microstructure of the TiO 2 varistor ceramic. The proper amount of Nb 2 O 5 dopant could make grain growing. |
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| Keywords: | TiO 2 ceramic varistor electrical proper ty |
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