| 高压低饱和压降GTR最佳设计 |
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| 引用本文： | 张华曹,张球梅.高压低饱和压降GTR最佳设计[J].西安理工大学学报,1994,10(2):111-116. |
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| 作者姓名： | 张华曹 张球梅 |
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| 作者单位： | 西安理工大学自动化工程系 |
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| 摘 要： | 本文提出了高压低饱和压降ＧＴＲ的最佳设计方法。分析表明，高压低饱和压降晶体管采用集电区穿通性设计比非穿通性设计有利。并论证了穿通因子（Ｎ＝Ｗｅ／Ｘｍ）的最佳值为０．７左右。在此范围内，在保证高击穿电压的条件下，可使他和压降ＵＣＥＲ较低，发射极面积Ａｅ最小，大注入下的电流增益大。
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| 关 键 词： | 高压GTR，低饱和压降，穿通设计 |
The Best Design of High Voltage and Low Saturation Voltage GTR |
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| Zhang Huacao,Zhang Qiumei.The Best Design of High Voltage and Low Saturation Voltage GTR[J].Journal of Xi'an University of Technology,1994,10(2):111-116. |
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| Authors: | Zhang Huacao Zhang Qiumei |
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| Institution: | Zhang Huacao;Zhang Qiumei |
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| Abstract: | The best design method of high voltage and low saturation voltage GTR presented in this paper shows that the collector region through design is better than non-through design. The best range ofthrough factor N=Wc/Xm is about 0.7.The lower saturation voltage UCER, the smaller emitter areaand the high current gain under great injection can be achieved in this range. |
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| Keywords: | high voltage GTR low saturation through design |
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