| ZnO薄膜的气敏和光电性能的研究进展 |
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| 引用本文： | 周二根.ZnO薄膜的气敏和光电性能的研究进展[J].中国西部科技,2011,10(22):33-34. |
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| 作者姓名： | 周二根 |
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| 作者单位： | 重庆师范大学,重庆,400047 |
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| 摘 要： | ZnO是一种新型的宽带隙半导体材料,在气敏器件、光电器件及压电器件等方面具有广泛的应用前景,因而受到物理学界的广泛关注。本文介绍ZnO薄膜的气敏、光电性能的研究进展。
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| 关 键 词： | ZnO 气敏 光电性能 |
The Research Progress of the Gass Sensation and Photoelectron Performance of ZnO Thin Film |
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| ZHOU Er-gen.The Research Progress of the Gass Sensation and Photoelectron Performance of ZnO Thin Film[J].Science and Technology of West China,2011,10(22):33-34. |
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| Authors: | ZHOU Er-gen |
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| Institution: | ZHOU Er-gen(Chongqing Normal University,Chongqing 400047) |
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| Abstract: | ZnO is a novel wide gap semiconductor material.It has widespread application in gas sensing devices,photoelectric devices and piezoelectric devices.The article introduced the research progress of gas sensation and photoelectron performance of ZnO thin film. |
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| Keywords: | ZnO Gas sensation Photoelectron performance |
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