Fabrication and superconducting properties of nano-SiC doped MgB2 tapes |
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Authors: | Zhang XianPing Ma YanWei Gao ZhaoShun Yu ZhengGuang Wang DongLiang Watanabe K. Guo JianDong |
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Affiliation: | (1) Applied Superconductivity Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100080, China;(2) Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;(3) Department of Physics, Peking University, Beijing, 100080, China |
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Abstract: | Nano-SiC doped MgB2 tapes were prepared by the in situ powder-in-tube method. Heat treatment was performed at 650°C for 1 h. XRD data indicate that SiC particles had reacted with
the MgB2 during sintering process. MgB2 core seemed to be denser after SiC doping, and the critical temperature was slightly depressed. The critical current density
J
c of the SiC doped tapes was significantly enhanced in magnetic fields up to 14 T compared to the undoped ones. For the 5%
SiC doped samples, J
c was increased by a factor of 32 at 4.2 K, 10 T. The enhancement of J
c-B properties in SiC doped MgB2 tapes is considered to be due to the enhancement of grain linkages and the introduction of effective flux pining centers.
The substitution of B by C in MgB2 grains is thought to be the main reason for the improvement of the flux pinning ability in SiC doped MgB2 tapes.
Supported by the National Natural Science Foundation of China (Grant Nos. 50472063 and 50377040) and the State Key Development
Program for Basic Research Program of China (Grant No. 2006CB601004) |
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Keywords: | MgB2 tapes SiC doping critical current properties mechanism |
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