碳化硅薄膜制备及其场发射特性

采用热丝化学气相沉积法在Si（111）、Ti（101）衬底上制备了SiC薄膜，并利用X射线衍射和傅里叶变换红外吸收光谱（FTIR）对薄膜的结构、成分及化学键合状态进行了分析．XRD结果表明，制备的SiC薄膜呈现3C-SiC结晶相，有很好的择优取向性．HIR谱显示，薄膜的吸收特性主要为Si-C键的吸收，其吸收峰为804．95cm^-1．从原子力显微镜对SiC薄膜表面形貌的测试分析可以看出，样品表面呈规则精细颗粒状结构且薄膜结构致密．此外，在高真空系统中（6．0×10^-4Pa）对生长的SiC薄膜进行场敛发射特性测试，结果表明生长的SiC薄膜具有场致发射特性：样品的开启电压为82．1V／μm，最大电流密度为631．5μA／cm^2．

Fabrication of Silicon Carbide Thin Films and Their Field Emission Properties

Silicon carbide （SiC） films were deposited on Si （111） and Ti （101） substrates by hot filament chemical vapor deposition （HFCVD）. Then X-ray diffraction （XRD） and Fourier Transform Infrared （FTIR） absorption spectroscopy were used to explore the composition and bonding structures of the SiC films, and atomic force microscope （AFM） was performed to study surface micrography. The results revealed that the deposited samples were 3C-SiC crystalline phase and had good oriented characteristic. FTIR spectra showed that the main absorption peak（804.95 cm^-1） was induced by Si-C bonding. The surface of the films presented regular particle shape and grains were tightly packed, in addition, the field emission characters of the deposited films were measured in high vacuum system （6.0 × 10^-4 Pa）, and a highly stable field emission current density was obtained. The threshold voltages and the maximum electric current density of the sample were 82.1 V/ μm and 631.5 μA/cm^-2 respectively.