| 利用扫描隧道显微镜构造硅表面nm尺度图形的研究 |
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| 引用本文： | 赵玉清 朱京平. 利用扫描隧道显微镜构造硅表面nm尺度图形的研究[J]. 西安交通大学学报, 1998, 32(11): 13-16 |
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| 作者姓名： | 赵玉清 朱京平 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 在大气中，利用扫描隧道显微镜（ＳＴＭ）在氢钝化的Ｓｉ（１１０）表面直接进行化学改性，形成了２０～６０ｎｍ的ＳｉＯ线条．通过化学腐蚀，成功地将该ｎｍ线条转移到Ｓｉ基片上．实验证明，经ＳＴＭ改性的ＳｉＯ可以作为腐蚀掩膜，利用此氧化膜可以在Ｓｉ表面构造ｎｍ尺度图形结构，从而为研究构造具有量子效应的微器件工艺奠定了基础．
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| 关 键 词： | 电子束曝光 扫描隧道显微镜 nm技术 nm尺度表面改性 微细加工 |
Nano Scale Pattern of Silicon Surface by Scanning Tunneling Microscope |
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| Zhao Yuqing Zhu Jingping Xu Jiao. Nano Scale Pattern of Silicon Surface by Scanning Tunneling Microscope[J]. Journal of Xi'an Jiaotong University, 1998, 32(11): 13-16 |
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| Authors: | Zhao Yuqing Zhu Jingping Xu Jiao |
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| Abstract: | Chemical modification of a H passivated Si(110) surface has been made by scanning tunneling microscope (STM) operated in air. Oxide nanowires are fabricated. Using chemical etching, the patterns are transfered to the silicon substrate. It is shown experimentally that the oxide film of Si can be used to make etching mask. Nanoscale patterns were fabricated on Si surface by application of quantum effect devices. |
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| Keywords: | electron beam lithography scanning tunneling microscopy nanometer technology nanometer scale modification of surface microfabrication |
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