| NiFe2O4铁氧体薄膜溅射产额的蒙特卡罗模拟 |
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| 引用本文： | 李金龙,余忠,孙科,史富荣,李雪,兰中文.NiFe2O4铁氧体薄膜溅射产额的蒙特卡罗模拟[J].实验科学与技术,2011,9(1):11-14. |
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| 作者姓名： | 李金龙 余忠 孙科 史富荣 李雪 兰中文 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054 |
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| 摘 要： | 通过蒙特卡罗方法,运用SRIM程序,模拟了Ar+轰击NiFe2O4铁氧体靶材的过程,研究了不同入射能量及角度Ar+轰击NiFe2O4靶材引起的溅射产额。结果表明:离子垂直入射时NiFe2O4中各元素的溅射产额和出射原子能量都随入射离子能量的增大而增大;各元素产额的比率在低能离子入射时,变化较大,但能在较大的入射离子能量范围内保持相对稳定的值;离子斜入射时,随着入射离子角度增加,各元素的溅射产额先增大,后减小,并在77°左右达到最大值;离子入射角度变化时,并不严重影响各元素之间产额的比率,且组分比率能在较大的离子入射角度范围内保持相对稳定的值。
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| 关 键 词： | NiFe2O4铁氧体薄膜 溅射产额 SRIM程序 蒙特卡罗方法 |
Monte-carlo Simulation of Sputtering Yield for NiFe2 O4 Ferrite Thin Film |
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| LI Jin-long,YU Zhong,SUN Ke,SHI Fu-rong,LI Xue,LAN Zhong-wen.Monte-carlo Simulation of Sputtering Yield for NiFe2 O4 Ferrite Thin Film[J].Experiment Science & Technology,2011,9(1):11-14. |
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| Authors: | LI Jin-long YU Zhong SUN Ke SHI Fu-rong LI Xue LAN Zhong-wen |
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| Institution: | LI Jin-long,YU Zhong,SUN Ke,SHI Fu-rong,LI Xue,LAN Zhong-wen(School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | One have used SRIM program to simulate the bombardment process of NiFe2O4 ferrite target bombarded by Ar+ through Monte-Carlo method.The sputtering yield bombarded by Ar+ has been studied for different incident energy and angles.The results show that both the sputtering yield and emergence atomic energy increases as the incident ion energy increases.When the angle of ions into the NiFe2O4 target is vertical,the yield ratio changes largely when energy is low.But it can remain relatively stable value in large... |
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| Keywords: | NiFe2O4 ferrite thin film sputtering yield SRIM program Monte-carlo method |
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