| PTCR半导陶瓷老化后的复阻抗研究 |
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| 引用本文： | 龚树萍,罗勇,姜胜林,周东祥.PTCR半导陶瓷老化后的复阻抗研究[J].华中科技大学学报(自然科学版),1997(6). |
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| 作者姓名： | 龚树萍 罗勇 姜胜林 周东祥 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 根据ＰＴＣＲ半导体陶瓷在湿热条件下的老化试验结果，对ＰＴＣＲ半导体陶瓷老化前后分别提出了不同的等效电路模型，通过对阻抗－频率关系曲线的测量，求出了ＰＴＣＲ半导瓷的特性参数．计算结果表明，老化后室温阻值增加，这主要是电极氧化引起的．对实验结果进行了物理本质的初步探讨．
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| 关 键 词： | PTCR 老化 复阻抗 |
The Complex Impedance of PTCR Semiconductor Ceramics after Aging |
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| Gong Shuping Dept.
of Solid State Electronics,HUST,Wuhan ,China.
Luo Yong Jiang Shenglin Zhou Dongxiang.The Complex Impedance of PTCR Semiconductor Ceramics after Aging[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1997(6). |
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| Authors: | Gong Shuping Dept
of Solid State Electronics HUST Wuhan China
Luo Yong Jiang Shenglin Zhou Dongxiang |
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| Institution: | Gong Shuping Dept.
of Solid State Electronics,HUST,Wuhan 430074,China.
Luo Yong Jiang Shenglin Zhou Dongxiang |
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| Abstract: | According to the aging test results in
humidity and heat environment, different equivalent circuits for PTCR semiconductor ceramics
before and after aging are proposed, respectively. the characteristic parameters of PTCR
semiconductor ceramics have been obtained from the impedance frequency curves measured.
Results of calculation show that the oxidization of electrodes is the main factor that causes the
increase of the resistance at room temperature after aging. The intrinsic physical nature of the
experimental results is preliminarily discussed. |
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| Keywords: | PTCR aging complex impedance |
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