| 低噪声四管像素CMOS图像传感器设计与实现 |
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| 引用本文： | 徐江涛,李斌桥,姚素英,任张强.低噪声四管像素CMOS图像传感器设计与实现[J].天津大学学报(自然科学与工程技术版),2009,42(2):149-152. |
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| 作者姓名： | 徐江涛 李斌桥 姚素英 任张强 |
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| 作者单位： | 天津大学电子信息工程学院,天津,300072
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| 基金项目： | 国家自然科学基金，天津市科技创新专项基金 |
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| 摘 要： | 基于SMIC 0.18gm工艺设计了一种低噪声的四管像素结构。通过在像素内增加传输管和存储节点实现了相关双采样，可同时消除固定模式噪声和随机噪声；采用Pinned光电二极管技术大幅降低了表面暗电流。所设计像素尺寸为3.6μm×3.6μm，并将其应用于一款648×488像素阵列CMOS图像传感器，经流片测试，图像传感器信噪比可达42dB，在25℃下表面暗电流为25mV／s（转换成电压表示的）。所设计的四管Pinned光电二极管像素结构相对于传统三管像素结构，具有较低的噪声和暗电流。
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| 关 键 词： | CMOS图像传感器 四管像素 随机噪声 暗电流 |
Design and Realization of Low Noise Four Transistor Pixel CMOS Image Sensor |
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| XU Jiang-tao,LI Bin-qiao,YAO Su-ying,REN Zhang-qiang.Design and Realization of Low Noise Four Transistor Pixel CMOS Image Sensor[J].Journal of Tianjin University(Science and Technology),2009,42(2):149-152. |
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| Authors: | XU Jiang-tao LI Bin-qiao YAO Su-ying REN Zhang-qiang |
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| Institution: | ( School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China) |
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| Abstract: | A low noise four transistor pixel structure was designed based on SMIC 0.18μm process. By adding transfer gate and storage node, correlated double sampling was realized and fixed pattern noise could random noise could be eliminated. Surface dark current was remarkably reduced by introducing Pinned photodiode technique. The pixel pitch is 3.6μm×3.6μm, which was used in a 648×488 pixel array CMOS image sensor. Test result shows that SNR of image sensor is 42 dB and surface dark current is 25 mV/s at 25℃. Compared with traditional three transistor pixel, the four transistor Pinned photodiode pixel has lower noise and lower dark current. |
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| Keywords: | CMOS image sensor four transistor pixel random noise dark current |
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