Improving the electrical performance of resistive switching memory using doping technology |
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| Authors: | Yan Wang Qi Liu HangBing Lü ShiBing Long Wei Wang YingTao Li Sen Zhang WenTai Lian JianHong Yang Ming Liu |
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| Institution: | [1]College of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China [2]Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029,China |
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| Abstract: | In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM. |
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| Keywords: | non-volatile memory resistive random access memory （RRAM） doping technology |
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