首页 | 本学科首页   官方微博 | 高级检索  
     检索      

碳化硅电力电子器件及其在电力电子变压器中的应用
引用本文:刘宏勋,徐海.碳化硅电力电子器件及其在电力电子变压器中的应用[J].科学技术与工程,2020,20(36):14777-14790.
作者姓名:刘宏勋  徐海
作者单位:河北工业大学电气工程学院,省部共建电工装备可靠性与智能化国家重点实验室,天津300130;河北工业大学电气工程学院,省部共建电工装备可靠性与智能化国家重点实验室,天津300130
摘    要:随着“坚强智能电网”建设的不断深化以及“泛在电力物联网”概念的提出,硅基电力电子器件以及电力电子化装置正面临着新的挑战。以碳化硅基为代表的宽禁带功率半导体器件,因其高耐压、高耐温、高频开关等优良特性,在中高压领域前景广阔。其典型应用之一即因硅基器件耐压水平有限而难有突破的电力电子变压器。电力电子变压器除了能实现传统工频交流变压器的电压变换和电气隔离功能之外,还在故障切除、功率调控、分布式可再生能源接入等方面有独特优势。本文首先对碳化硅电力电子器件的研究与发展作简要概述,而后对电力电子变压器的发展进行了简单梳理。最后,重点介绍了几种典型的应用碳化硅器件的电力电子变压器,以便相关研究的进一步开展。

关 键 词:碳化硅  宽禁带  电力电子器件  电力电子变压器
收稿时间:2019/12/4 0:00:00
修稿时间:2020/9/24 0:00:00

Silicon Carbide Power Electronic Devices and Their Applications in Power Electronic Transformer
Institution:State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Electrical Engineering, Hebei University of Technology
Abstract:With the deepening of the construction of "strong smart grid" and the concept of "ubiquitous power Internet of things", silicon-based power electronic devices and power electronic equipments are facing new challenges. The wide bandgap power semiconductor devices based on silicon carbide have a bright future in the field of medium and high voltage because of their excellent characteristics such as high voltage resistance, high temperature resistance and high frequency switch. One of its typical applications is the power electronic transformer which is difficult to break through because of the limited voltage withstand level of silicon-based devices. In addition to the voltage transformation and electrical isolation functions of traditional power frequency AC transformer, power electronic transformer has unique advantages in fault removal, power regulation, distributed renewable energy access, etc. In this paper, the research and development of silicon carbide power electronic devices are briefly summarized, and then the development of power electronic transformer is simply combed. Finally, several typical power electronic transformers using silicon carbide devices are introduced in order to carry out the related research further.
Keywords:silicon carbide  wide bandgap  power electronic devices  power electronic transformer
本文献已被 万方数据 等数据库收录!
点击此处可从《科学技术与工程》浏览原始摘要信息
点击此处可从《科学技术与工程》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号