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| 碲镉汞退火过程的电子结构变化的理论模型 | |
| 引用本文： | 张端明,王建安,李国元. 碲镉汞退火过程的电子结构变化的理论模型[J]. 华中科技大学学报(自然科学版), 1991, 0(1) |
| 作者姓名： | 张端明 王建安 李国元 |
| 作者单位： | 华中理工大学物理系(张端明，王建安)，华中理工大学物理系(李国元) |
| 摘 要： | 本文提出了退火过程中碲镉汞电子结构变化的理论模型,并根据此理论模型建立了理论公式.由理论公式经计算得出的理论曲线与实验曲线很好地吻合,从而证明了理论模型的正确性. |
| 关 键 词： | 碲镉汞 电子结构 退火 电活性 电子迁移率 空穴迁移率 |
Theoretical Models for the Variation of Electronic Structure of Hg1-x -Cdx-Te (MCT) during Annealing |
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| Zhang Duanming Wang Jianan Li Guoyuan. Theoretical Models for the Variation of Electronic Structure of Hg1-x -Cdx-Te (MCT) during Annealing[J]. JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE, 1991, 0(1) | |
| Authors: | Zhang Duanming Wang Jianan Li Guoyuan |
| Affiliation: | Zhang Duanming Wang Jianan Li Guoyuan |
| Abstract: | Theoretical models for MCT during annealing and for annealed MCT material are proposed. The variation of parameters of PAT (positron annihilation test) r,H and resistance R during annealing with the annealing temperature and the resistance-temperature characteristics of annealed MCT material can be well explained by the models proposed. The theoretical models also give moving pictures of the variation of MCT electronic structure. Theoretical results are in good agreement with test results. |
| Keywords: | Hg1-x Cdc Te(MCT) Electronic structure Annealing Electri- cally active Mobility of electron Mobility of vacancy |
| 本文献已被 CNKI 等数据库收录！ | |