| 基于ZnO活性层薄膜晶体管的研究进展 |
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| 引用本文： | 许洪华,陈跃宁,袁广才.基于ZnO活性层薄膜晶体管的研究进展[J].沈阳师范大学学报(自然科学版),2007,25(1):34-36. |
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| 作者姓名： | 许洪华 陈跃宁 袁广才 |
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| 作者单位： | 1. 辽宁大学物理系,辽宁沈阳,110036
2. 北京交通大学光电子技术所,北京,100044 |
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| 摘 要： | ZnO作为活性层制作薄膜晶体管(thin film transistor,简称TFT),因性能改进显著而成为新兴的研究热点.就TFT发展历史、器件典型结构以及在AMLCD中的应用、国外ZnO TFT器件的进展状况进行综述,并展望了器件的前景.
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| 关 键 词： | 薄膜晶体管 有源矩阵液晶显示(AMLCD) 活性层 |
| 文章编号： | 1673-5862(2007)01-0034-03 |
| 修稿时间： | 2006-09-01 |
Advances in Research on Thin Film Transistor Using ZnO as the Active Channel Layer |
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| XU Hong-hua,CHEN Yue-ning,YUAN Guang-cai.Advances in Research on Thin Film Transistor Using ZnO as the Active Channel Layer[J].Journal of Shenyang Normal University: Nat Sci Ed,2007,25(1):34-36. |
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| Authors: | XU Hong-hua CHEN Yue-ning YUAN Guang-cai |
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| Institution: | 1. Department of Physics, Liaoning University, Shenyang 110036, China; 2. Institute of Photoelectron Research, Beijing Jiaotong University, Beijing 100044, CHina |
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| Abstract: | Thin film transistor(TFT) using ZnO as the active channel layer is of great importance because of several demonstrations of ZnO TFT achieving much good performance.This paper describes the historical background,the typical structure and actual application in AMLCDs of thin film transistor.The prospect of ZnO based TFT is reviewed as well. |
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| Keywords: | ZnO |
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