| 磁控靶溅射刻蚀的模拟研究 |
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| 引用本文： | 胡作启,李佐宜,熊锐,杨晓非.磁控靶溅射刻蚀的模拟研究[J].华中科技大学学报(自然科学版),1997(11). |
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| 作者姓名： | 胡作启 李佐宜 熊锐 杨晓非 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 基金项目： | 国防科工委八五预研项目 |
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| 摘 要： | 建立了磁控溅射单粒子模型，结合靶表面磁场的分布，用ＭｏｎｔｅＣａｒｌｏ方法研究了溅射气体粒子的运动规律，得到靶表面刻蚀的图形，发现靶中间圆环的刻蚀最强，这与实验结果和磁场的水平分量分布一致．
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| 关 键 词： | 溅射模型 磁场分布 靶刻蚀 MonteCarlo方法 |
Etching Simulation of Magnetron Target |
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| Hu Zuoqi Dept. of Solid State Electronics,HUST,Wuhan ,China. Li Zuoyi Xiong Rui Yang Xiaofei.Etching Simulation of Magnetron Target[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1997(11). |
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| Authors: | Hu Zuoqi Dept of Solid State Electronics HUST Wuhan China Li Zuoyi Xiong Rui Yang Xiaofei |
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| Institution: | Hu Zuoqi Dept. of Solid State Electronics,HUST,Wuhan 430074,China. Li Zuoyi Xiong Rui Yang Xiaofei |
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| Abstract: | A single particle model for magnetron sputtering is developed. With the magnetic field distribution on the target surface, the motion of the gas particle during sputtering is studied by Monte Carlo method. Etching pattern on the target surface is obtained, and it is shown that the etching is enhanced at the center ring of target. Such an etching distribution is consistent with that of the horizontal component of magnetic field and that given by experiment. |
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| Keywords: | sputtering model magnetic field distribution target etching Monte Carlo method |
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