N型4H—SiC中载流子密度和霍耳迁移率的模拟及研究

采用流体动力学平衡方程在温度为３０ Ｋ 到１０００ Ｋ 范围内计算了霍耳迁移率，并用补偿模式研究了载流子密度与温度的关系．结果表明，电离杂质散射对霍耳迁移率与温度的关系有很大的影响．霍耳迁移率的低温值主要由电离杂质散射确定，而它的高温尾取决于声学声子，极化光学声子和谷间声子散射．计算的霍耳迁移率与实验数据相符

Modeling and Analysis of Temperature Dependence of the Carrier Concentration and Hall Mobility in N-type 4H-SiC

In this paper, we present a Hall mobility calculation by hydrodynamic balance equations at temperature from 30 K to 1 000 K. We employ a compensation model to analyze the carrier concentration versus temperature data. The results show that the ionized impurity scattering has a considerable influence on the mobility vs temperature curve. The ionized impurity limits the low-temperature value of the mobility and the high-temperature tail is limited by acoustic, polar optical and intervalley optical lattice scattering. The calculated Hall mobility is in good agreement with the experiment data.