First-principles study of the effects of Si doping on geometric and electronic structure of closed carbon nanotube

The effects of Si doping on geometric and electronic structure of closed carbon nanotube （CNT） are studied by, a first-principles method, DMol. It is found that the local density of states at the Fermi level （Er） increases due to the Si-doping and the non-occupied states above the Er go down toward the lower energy range under an external electronic field. In addition, due to the doping of Si, a sub-tip on the CNT cap is formed, which consisted of the Si atom and its neighbor C atoms. From these results it is concluded that Si-doping is beneficial to the CNT field emission properties.

First-principles study of the effects of Si doping on geometric and electronic structure of closed carbon nanotube

The effects of Si doping on geometric and elec-tronic structure of closed carbon nanotube (CNT) are stud-ied by, a first-principles method, DMol. It is found that the local density of states at the Fermi level (EF) increases due to the Si-doping and the non-occupied states above the EF go down toward the lower energy range under an external elec-tronic field. In addition, due to the doping of Si, a sub-tip on the CNT cap is formed, which consisted of the Si atom and its neighbor C atoms. From these results it is concluded that Si-doping is beneficial to the CNT field emission properties.