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一种两级CMOS运算放大器电源抑制比提高技术(英文)
引用本文:吴贵能,周玮.一种两级CMOS运算放大器电源抑制比提高技术(英文)[J].重庆邮电学院学报(自然科学版),2010(2).
作者姓名:吴贵能  周玮
作者单位:重庆邮电大学光电工程学院;
摘    要:在解释了传统基本两级CMOS运算放大器低电源抑制比(PSRR)原因的基础上,提出了一种简单电路技术来提高传统基本两级CMOS运算放大器中频PSRR。该方法原理是通过改变偏置结构产生一个额外的信号支路在输出端跟随电源增益,这样在输出端可以得到近似为零的电源纹波增益,从而能提高运放的PSRR。采用0.35μm标准CMOS工艺库,在Cadence环境下仿真结果显示,改进的运算放大器的PSRR在中频范围内比传统运算放大器可提高20dB以上。

关 键 词:CMOS  两级  运算放大器  电源抑制比  

PSRR improvement technique for two-stage CMOS operational amplifier
WU Gui-neng,ZHOU Wei.PSRR improvement technique for two-stage CMOS operational amplifier[J].Journal of Chongqing University of Posts and Telecommunications(Natural Sciences Edition),2010(2).
Authors:WU Gui-neng  ZHOU Wei
Institution:College of Electronics Engineering;Chongqing University of Posts and Telecommunications;Chongqing 400065;P.R.China
Abstract:On the basis of explaining low power-supply rejection ratio(PSRR)of the traditional basic two-stage CMOS operational amplifier(op-amp),a simple circuit technique is presented for improving poor midband PSRR of the traditional basic two-stage CMOS single ended op-amp.The principle of the technique is to create an additional parallel signal path to follow signal gain from the power-supply to the output by means of changing the bias structure,which produces almost zero power-supply ripple gain through the outp...
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