| 磁控溅射Cu膜之Cu/SiO2/Si结构的应力 |
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| 引用本文： | 陈先带,张红,赵寿南.磁控溅射Cu膜之Cu/SiO2/Si结构的应力[J].华南理工大学学报(自然科学版),2002,30(5):29-32. |
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| 作者姓名： | 陈先带 张红 赵寿南 |
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| 作者单位： | 华南理工大学,应用物理系,广东,广州,510640 |
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| 摘 要： | 采用红外光弹测量法用磁控溅射淀积在SiO2/Si晶片表面的Cu膜在Si衬底中引入的应力。结果表明：SiO2在Si衬氏中引和张应力，而Cu在Si衬氏中引入压应力，在Cu/SiO2/Si结构中，随SiO2膜厚减小和Cu膜厚增大，Si衬底中张应力逐渐减小，最终转为压应力。同时比较、分析了理论估算值和实验结果的差异，预示和分析了Cu引线的可靠性。
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| 关 键 词： | 硅 应力 红外光弹 铜膜 磁控溅射 |
| 文章编号： | 1000-565X(2002)05-0029-04 |
| 修稿时间： | 2001年10月17 |
Stress in Cu/SiO2/Si Structure of Magneto-control Sputtering Cu Film |
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| Chen Xian_dai,Zhang Hong,Zhao Shou_nan.Stress in Cu/SiO2/Si Structure of Magneto-control Sputtering Cu Film[J].Journal of South China University of Technology(Natural Science Edition),2002,30(5):29-32. |
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| Authors: | Chen Xian_dai Zhang Hong Zhao Shou_nan |
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| Abstract: | The stress in substrate Si is measured by infrared photoelasticity method, which is brought by depositing of magneto_control sputtering Cu film on SiO 2/Si surface. It is shown that SiO 2 film brings tensile stress into substrate Si and Cu film brings compressive stress into substrate. In Cu/SiO 2/Si structure, the tensile stress in substrate Si will be decreased when SiO 2 film thickness decreased as well as when Cu film thickness increased, and finally the stress becomes compressive. The experimental result is compared with the theoretical estimation. This work is helpful to the analyze reliability of IC Cu wiring. |
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| Keywords: | silicon stress infrared photoelasticity copper film sputtering |
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