| GaN/AlxGa1-xN量子点中类氢杂质位置对激子态的影响 |
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| 引用本文： | 戴宪起,郑冬梅,黄凤珍.GaN/AlxGa1-xN量子点中类氢杂质位置对激子态的影响[J].河南师范大学学报(自然科学版),2005,33(4):38-42. |
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| 作者姓名： | 戴宪起 郑冬梅 黄凤珍 |
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| 作者单位： | 河南师范大学,物理与信息工程学院,河南,新乡,453007 |
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| 基金项目： | 国家自然科学基金（60476047） |
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| 摘 要： | 利用有效质量方法和变分原理,考虑内建电场效应和量子点（QD）的三维约束效应,研究类氢杂质对GaN/AlxGa1-xN量子点中激子态的影响.结果表明：量子点中心的类氢杂质使激子的结合能升高,基态能降低,QD系统的稳定性增强,发光波长红移.杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定.随着杂质从量子点的上界面沿着Z轴移至下界面,激子基态能增大,结合能减小,带间发光蓝移.
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| 关 键 词： | 类氢杂质 量子点 自发极化和压电极化 激子结合能 发光波长 |
| 文章编号： | 1000-2367(2005)04-0038-05 |
| 收稿时间： | 2005-08-11 |
| 修稿时间： | 2005年8月11日 |
Effects of Hydrogenic Impurity Position on Exciton States Confined in GaN/AlxGa1-xN Quantum dots |
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| DAI Xian-qi,ZHENG Dong-mei,HUANG Feng-zhen.Effects of Hydrogenic Impurity Position on Exciton States Confined in GaN/AlxGa1-xN Quantum dots[J].Journal of Henan Normal University(Natural Science),2005,33(4):38-42. |
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| Authors: | DAI Xian-qi ZHENG Dong-mei HUANG Feng-zhen |
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| Institution: | 1. College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China |
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| Abstract: | In this paper, within the framework of effective-mass approximation, effects of hydrogenic impurity on exciton states confined in GaN/AlxGa1-xN quantum dots are investigated by means of a variational approach. The numerical results show that the exciton binding energy and the emission wavelength increases with introducing the impurity. The carriers are more strongly confined in the QDs, The influence of the hydrogenic impurity position on the exciton states is also investigated in the paper. The numerical results show that the carriers are more strongly confined in the quantum dot when the impurity localized at the top of the QDs. The exciton binding energy and the emission wavelength are reduced with the shift of the impurity from the top to the bottom. |
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| Keywords: | Hydrogenie impurity quantum dots Piezoelectricity and spontaneous polarization Exciton binding energy Emission wavelength |
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