| VDMOS器件击穿特性研究 |
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| 引用本文： | 张雯,张桂兰.VDMOS器件击穿特性研究[J].辽宁大学学报(自然科学版),1996,23(3):20-25. |
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| 作者姓名： | 张雯 张桂兰 |
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| 作者单位： | [1]辽宁大学电子系 [2]辽宁大学物理系 |
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| 摘 要： | 本文给出了具有场环和场板的穿通型ＶＤＭＯＳ结构的击穿电压的解析表达式。产通过与在ｎ／ｎ＾＋外延衬底上制造的带有场环的二级管结构的ＶＤＭＯＳ器件的实验结果，进行比较，二者吻合的很好。
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| 关 键 词： | 击穿电压 保护环 VDMOS器件 穿通型 |
Breakdown Voltage Characteristics Research in VDMOS |
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| Zhang Wen.Breakdown Voltage Characteristics Research in VDMOS[J].Journal of Liaoning University(Natural Sciences Edition),1996,23(3):20-25. |
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| Authors: | Zhang Wen |
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| Abstract: | The breakdown voltage of a closed-form analytical expressinns for the punched through VDMOS structures, including the effect of floating-guardrings and field plates is proPOsed. Compared the theoretical with the result, of measured data on VDMOS devices by floating-guardring diode structues, fabricated on n/n epilaxial, is very good, in consisleney. |
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| Keywords: | The breakdown voltage PN junction Guardring |
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