| 薄基区异质结晶体管的负阻特性与分析 |
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| 引用本文： | 张世林,李建恒,郭维廉,齐海涛,梁惠来.薄基区异质结晶体管的负阻特性与分析[J].天津大学学报(自然科学与工程技术版),2006,39(1):109-113. |
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| 作者姓名： | 张世林 李建恒 郭维廉 齐海涛 梁惠来 |
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| 作者单位： | 天津大学电子信息工程学院，天津大学电子信息工程学院，天津大学电子信息工程学院，天津大学电子信息工程学院，天津大学电子信息工程学院 天津 300072，天津 300072，天津 300072，天津 300072，天津 300072 |
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| 摘 要： | 采用分子束外延方法生长了8 nm基区的InGaP-GaAs双异质结材料,研制成具有负阻特性的异质结晶体管．该晶体管可以集成在高速高频的数字逻辑电路中,大大减少了器件数目．讨论了薄基区负阻异质结晶体管的负阻特性及其物理机制．器件负阻特性的产生与其结构密切相关,包括导带势垒尖峰和基区宽度负反馈效应．推出了物理公式,并且使用PSPICE模拟软件建立了电路模型．模拟结果符合制作器件的测量结果．
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| 关 键 词： | 异质结晶体管 负阻特性 薄基区 电路模拟 |
| 文章编号： | 0493-2137（2006）01-0109-05 |
| 收稿时间： | 2004-11-30 |
| 修稿时间： | 2004-11-302005-04-30 |
Negative Differential Resistance Characteristic and Analysis of Thin Base HBT |
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| ZHANG Shi-lin,LI Jian-heng,GUO Wei-lian,QI Hai-tao,LIANG Hui-lai.Negative Differential Resistance Characteristic and Analysis of Thin Base HBT[J].Journal of Tianjin University(Science and Technology),2006,39(1):109-113. |
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| Authors: | ZHANG Shi-lin LI Jian-heng GUO Wei-lian QI Hai-tao LIANG Hui-lai |
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| Institution: | School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | InGaP-GaAs thin base (8 nm) dual heterojunction material is grown by molecular beam extension ( MBE) , and a heterojunction bipolar transistor( HBT) with negative differential resistance ( NDR) characteristic is fabricated. NDRHBT can be integrated in high speed and high frequency digital logic circuit, the number of devices can be reduced greatly. The NDR characteristic and physical analysis of thin base HBT are presented. The NDR characteristic of this device is closely relative to its structure, including conduction band spike and base width negative feedback effect. The physical formulas are given and the circuit model is founded by PSPICE. The simulated result is close to the measure outcome. |
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| Keywords: | heterojunction bipolar transistor negative differential resistance characteristic thin base circuit simulation |
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