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CVD金刚石薄膜的掺硼研究
引用本文:潘鹏,常明,朱亚东.CVD金刚石薄膜的掺硼研究[J].天津理工大学学报,2005,21(1):43-45.
作者姓名:潘鹏  常明  朱亚东
作者单位:天津理工大学,光电信息与电子工程系,天津,300191
基金项目:天津市自然科学基金资助项目(023602511),天津市自然科学重点基金资助项目(00380021).
摘    要:主要介绍硼掺杂金刚石膜的生长.采用热灯丝CVD法在硅上制备金刚石薄膜,采用三氧化二硼制备硼掺杂金刚石膜.利用拉曼光谱分析硼掺杂金刚石膜的生长情况.结果表明:硼的掺杂质量分数随生长时间延长而增大;利用SEM观察硼掺杂金刚石膜的表面晶粒变小;利用银浆在掺杂金刚石膜表面制备电极,测试电流随温度升高而变大.

关 键 词:金刚石薄膜  热灯丝CVD    拉曼光谱
文章编号:1673-095X(2005)01-0043-03
修稿时间:2004年4月9日

The research of Boron-Doped diamond film
PAN Peng,CHANG Ming,ZHU Ya-dong.The research of Boron-Doped diamond film[J].Journal of Tianjin University of Technology,2005,21(1):43-45.
Authors:PAN Peng  CHANG Ming  ZHU Ya-dong
Abstract:Boron-Doped Diamond (BDD) film of deposition is discussed. We use hot-filament-assisted chemical vapor deposition (HF-CVD) to prepare boron-doped diamond film on Si with B 2O 3. BDD film's growth condition was studied with Raman spectroscopy. It shows that the boron concentration in BDD goes up along with time. We find that BDD's block becomes small by SEM; Ag is made on BDD surface,the current passing two points of Ag is measured at different temperatures.
Keywords:diamond film  Boron-Doped  HF-CVD
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