| 低温高速双极晶体管基区的优化设计 |
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| 引用本文： | 魏同立,沈克强.低温高速双极晶体管基区的优化设计[J].东南大学学报(自然科学版),1995,25(3):34-38. |
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| 作者姓名： | 魏同立 沈克强 |
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| 作者单位： | 东南大学微电子中心 |
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| 摘 要： | 本文考虑禁带变窄效应和载流子冻析效应，分析了基区掺杂浓度的分布、基区峰值浓度的大小及位置对基区渡越时间的影响，结合基区电阻的温度模型，对低温度高速双极晶体管的优化设计作了探讨。
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| 关 键 词： | 低温 基区电阻 双极晶体管 优化设计 |
Optimizing the Base Profile for High-SpeedBipolar Transistore at Low Temperature |
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| Li Yao, Wei Tongli,Shen Keqiang.Optimizing the Base Profile for High-SpeedBipolar Transistore at Low Temperature[J].Journal of Southeast University(Natural Science Edition),1995,25(3):34-38. |
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| Authors: | Li Yao Wei Tongli Shen Keqiang |
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| Abstract: | The influences of the distribution of the base doping concentration, the magnitude and thelocaton of the base peak concentration on base transit time are studied by consideruig bandgap-narrow-ing effects and carrier freeze-out effects. Including a base resistance model dependent of temperature,optimuni design of the base of hish-spoed bipolar transistors at low temperatures is investigated. |
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| Keywords: | low temperature high-speed optimization / base transit time base resistance |
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