| NiO替位掺杂对（Mg_xCo_（1－x））O系材料的影响 |
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| 引用本文： | 周东祥,黎步银,龚树萍,吕文中.NiO替位掺杂对（Mg_xCo_（1－x））O系材料的影响[J].华中科技大学学报(自然科学版),1994(Z1). |
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| 作者姓名： | 周东祥 黎步银 龚树萍 吕文中 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 用ＮｉＯ替位掺杂对（Ｍｇ＿ｘＣｏ＿（１－ｘ））Ｏ系氧敏材料的性能进行了研究，通过测量样品在不同氧分压条件下的高温平衡电导，以及用ＸＲＤ，ＳＥＭ，差热分析等手段对样品进行了分析。实验发现替位掺杂的ＮｉＯ强烈地影响材料的稳定性、缺陷结构及微观结构等．
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| 关 键 词： | 氧敏材料 阳离子缺位 替位掺杂 氧分压 |
The Ifluence of NiO Substitution Doping on the Properties of(MgxCo1-x)O System Oxygen-Sensing Materials |
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| Zhou DongxiangDept.of Solid-State Electronics,H. U. S.T,Wuhan,China., Li Buyin, Gong Shuping ,Lu Wenzhong.The Ifluence of NiO Substitution Doping on the Properties of(MgxCo1-x)O System Oxygen-Sensing Materials[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1994(Z1). |
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| Authors: | Zhou DongxiangDeptof Solid-State Electronics H U ST Wuhan China Li Buyin Gong Shuping Lu Wenzhong |
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| Institution: | Zhou DongxiangDept.of Solid-State Electronics,H. U. S.T,Wuhan430074,China)., Li Buyin, Gong Shuping ,Lu Wenzhong |
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| Abstract: | The influence of NiO substitution doping on the properties of(MgxCo1-x)O system oxy-gen-sensitive materials is investigated.The relationship between the resistivity and the oxy-gen partial pressure has been measured and XRD,SEM,and DTA analyses have been madefor the materials,It has been found that the substitution doping of NiO significantly influ-ences the stability,the defect structure and microscopic structure of the(MgxCo1-x)O mate-rials,Experimental results show that(Mg0.4 Co0.4 Ni0.2) O is the most special composition. With this special composition,the structure of the material is most stable and it is hardlysensitive to the variation of oxygen partial pressure,On the other hand,the material withthe compositionof(Mg0.4Co0.3Ni0.3)O has homogeneously fine grains and a large amount ofporosity and hence the best oxygen-sensitive property. |
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| Keywords: | oxygen-sensing material cation vacancy substitution doping oxygen partial pressure |
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