| BaFX:Eu(X:Cl,Br)中电子陷阱的研究 |
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| 引用本文： | 熊光楠,娄素云,李岚,赵新丽.BaFX:Eu(X:Cl,Br)中电子陷阱的研究[J].天津理工大学学报,1998(3). |
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| 作者姓名： | 熊光楠 娄素云 李岚 赵新丽 |
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| 作者单位： | 天津理工学院材料物理研究所!300191 |
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| 摘 要： | X线影像板需要近红外光激励．掺入Ca2＋，S2＋，Mg2＋后，用650～700um光激励BaFX：Eu2＋，可以更为灵敏．用正电子湮没寿命谱，电子顺磁共振谱，加热发光谱和光激励发光谱，研究了X射线辐照后BaFx：Eu（X：CI，Br）电子陷阱的性质、状态、密度和转换．
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| 关 键 词： | 光激励发光 F心 X光像存储 |
A Study on Electron Traps in BaFX: Eu (X: Cl, Br) |
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| Xiong Guangnan,Lou Suyun,Li Lan,Zhan Xinli.A Study on Electron Traps in BaFX: Eu (X: Cl, Br)[J].Journal of Tianjin University of Technology,1998(3). |
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| Authors: | Xiong Guangnan Lou Suyun Li Lan Zhan Xinli |
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| Abstract: | The X-ray image Plate will need near infrared light to stimulate. BaFBr:Eu2 may be sensitive to stimulate further into 650-700 urn by doping with Ca2 ,Sr2 ,Mg2 . It is shown by positron annihilation lifetime, electron paramagnetic resonance, thermoluminescence and photostimulation luminescence that upon X-ray irradiation the nature states,density and charge of the photostimulatable electron traps in BaFX: Eu(X: Cl,Br)have been studied arter x-ray irradiation. |
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| Keywords: | photostimulated luminescence F center X-ray image storage |
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