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| 适合基站放大器应用的图形化SOI LDMOSFET的设计与分析 | |
| 引用本文： | 程新红,王洪涛,宋朝瑞,俞跃辉,袁凯,许仲德.适合基站放大器应用的图形化SOI LDMOSFET的设计与分析[J].温州大学学报(自然科学版),2006,27(2):20-24. |
| 作者姓名： | 程新红 王洪涛 宋朝瑞 俞跃辉 袁凯 许仲德 |
| 作者单位： | 1. 温州大学物理与电子信息学院,浙江,温州,325027 2. 中科院上海微系统与信息技术研究所,上海,200050 3. 东北微电子所,辽宁,沈阳,110021 |
| 摘 要： | 设计了一种新型图形化SOI（pattemed-Silicon-On-Insulator）LDMOSFET（lateral doublediffused MOSFETs）结构,埋氧层在沟道下方是间断的.工艺和性能模拟分析表明,此结构具有SOI器件低泄漏电流和低输出电容的特性,而且能抑制自加热效应和浮体效应.当漂移区长度为3μm时,开态击穿电压可达到30V、关态电压为71V、截止频率6.2GHz、最大振荡频率20GHz,2GHz时、栅偏压3V时的输出功率为0.8W/mm、功率增益为28dB.这些电学参数适合2G、60V无线通讯基站功率放大器的要求. |
| 关 键 词： | 图形化SOI 功率放大器 基站 |
| 文章编号： | 1006-0375(2006)02-0020-05 |
| 修稿时间： | 2006年1月10日 |
A Novel LDMOS Power Amplifier in Patterned-SOI Technology for Base Station Applications |
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| CHENG Xin-hong,WANG Hong-tao,SONG Zhao-rui,YU Yue-hui,YUAN Kai,XU Zhong-de.A Novel LDMOS Power Amplifier in Patterned-SOI Technology for Base Station Applications[J].Journal of Wenzhou University Natural Science,2006,27(2):20-24. | |
| Authors: | CHENG Xin-hong WANG Hong-tao SONG Zhao-rui YU Yue-hui YUAN Kai XU Zhong-de |
| Abstract: | A novel PSOI(Patterned-Silicon-On-Insulator) LDMOSFET with a silicon window beneath P body is proposed and simulated.The novel LDMOSFET did not degrade the advantage of SOI structure's low leakage current and parasitic capaci-tance,which also suppressed the self-heating effects and floating body effects.The on-state and the off-state breakdown voltage was 30V and 70V respectively.The cut-off frequency and the maximum oscillation frequency was 6.2GHz and 20GHz respec-tively,the output power and power gain at 2GHz was 0.8W/mm and 28dB respectively,which was sufficient for a 2GHz,60V-class base station amplifier applications. |
| Keywords: | LDMOSFET |
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