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单畴磁膜磁阻效应的计算
引用本文:刘英,任世伟,张忠武.单畴磁膜磁阻效应的计算[J].河北科技大学学报,1995(4).
作者姓名:刘英  任世伟  张忠武
作者单位:河北轻化工学院基础课部,石家庄市广播电视大学,河北师范大学
基金项目:中国科学院物理研究所磁学国家重点实验室资助
摘    要:对磁记录中使用的磁阻传感器的磁阻效应进行了定量分析,并提出了一种新的单畴磁膜退磁场的近似计算方法──平行线近似。计算结果表明,该近似比椭圆近似更好地反映了外磁场作用下单畴膜的磁荷分布。

关 键 词:磁阻传感器,磁膜,平行线近似

Calculation of Magnetoresistance for Magnetic─film of Single Domain
Liu Ying, Ren Shiwei, Zhang Zhongwu.Calculation of Magnetoresistance for Magnetic─film of Single Domain[J].Journal of Hebei University of Science and Technology,1995(4).
Authors:Liu Ying  Ren Shiwei  Zhang Zhongwu
Institution:Department of Fundamental Courses
Abstract:In this paper, the magnetoresistance effect of the magnetoresistance sensor applied in the magnetic record is analysed quantitatively. The parallel line approximation-a new method for The approximation of demagnetizing field in magnetic-film of single domain is presented. The results of the calculation show that this approximation describing the magneticcharge distribution on tile film of single domain under the interaction of applied magnetic field is better than the ellipse approximation.
Keywords:magnetoresistance sensor  magnetic-film  parallel line approximation
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