| 长度可调的纳米线阵列近红外减反射特性 |
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| 引用本文： | 陈俊.长度可调的纳米线阵列近红外减反射特性[J].科学技术与工程,2012,12(10):2306-2309. |
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| 作者姓名： | 陈俊 |
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| 作者单位： | 西北工业大学机电学院,西安,710072 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | 采用金属催化化学腐蚀方法在单晶硅表面制备了有序的纳米线阵列，研究了纳米线长度与腐蚀时间之间的关系，发现纳米线长度随着腐蚀时间的增加而增大。测试了所制备的具有纳米线阵列的硅表面在近红外1000nm～2500nm范围内的减反射性能。测试结果表明，与未处理的光滑硅表面相比，具有纳米线阵列的表面的反射率大辐降低，并随着纳米线长度的增加，反射率减小。
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| 关 键 词： | 纳米线阵列，减反射，近红外 |
| 收稿时间： | 1/6/2012 11:26:37 AM |
| 修稿时间： | 2/8/2012 12:47:17 PM |
Antireflection property in near infrared spectrum of length adjustable ordered nanowire arrays |
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| chenjun.Antireflection property in near infrared spectrum of length adjustable ordered nanowire arrays[J].Science Technology and Engineering,2012,12(10):2306-2309. |
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| Authors: | chenjun |
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| Institution: | (School of Mechanical and Electronical Engineering,Northwestern Polytechnical University,Xi’an 710072,P.R.China) |
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| Abstract: | Large area ordered silicon nanowire arrays are prepared on mono-crystalline silicon wafers using a metal-catalyzed chemical etching technique.The relationship between nanowire length and etching time are studied.It is found that nanowire length increase with the increase of etching time.Tests of reflection in near infrared spectrum(1 000 nm～2 500 nm)indicate that the reflectivity of nanowire arrays is very small compared to smooth silicon surface.In addition,the reflectivity of nanowire arrays reduces with the increase of nanowire length. |
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| Keywords: | nanowire array antireflection near infrared |
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