| 硅赝异质结双极晶体管的电学参数性能分析 |
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| 引用本文： | 黄流兴 魏同立. 硅赝异质结双极晶体管的电学参数性能分析[J]. 东南大学学报(自然科学版), 1994, 24(2): 8-14 |
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| 作者姓名： | 黄流兴 魏同立 |
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| 作者单位： | 东南大学微电子中心 |
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| 摘 要： | 具有重掺杂基区和中等掺杂发射区的硅赝异质结双极晶体管，其能带结构类似于真实异质结双极晶体管的能带结构。本文研究了硅赝质结双极晶体管的电流增益，截止频率和基区电阻等电学参数性能及其与温度的关系。并指出了硅赝异质结双极晶体管在低温下应用的潜力。
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| 关 键 词： | 双极晶体管 赝异质结 硅 电子参数 |
The Performance Analysis of Electrical Parameters for LowTemperature Pseudo Heterojunction Bipolar Transistors |
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| Huang Liuxing,Wei Tongli. The Performance Analysis of Electrical Parameters for LowTemperature Pseudo Heterojunction Bipolar Transistors[J]. Journal of Southeast University(Natural Science Edition), 1994, 24(2): 8-14 |
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| Authors: | Huang Liuxing Wei Tongli |
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| Abstract: | The peudo heterojunction bipolar transistor(PHBT) is a homojunction bipolar transistorhaving a moderately doped emitter and a heavily doped base, providing a bandgap profile similar toactual heterojunction bipolar transistors (HBT). In this paper, the characteritics and its temperaturedependence of current gain, cutoff frequency and be sheet resistance are investigated theoretically.The potential operation of PHBT at low temperature is disscuesed. |
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| Keywords: | bipolar transistors cutoff frequency low temperature/ pseudo heterojunction currentgain base sheet resistance |
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