| CuCr50触头合金大电流分断相变层的显微组织控制 |
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| 引用本文： | 杨志懋,崔建国.CuCr50触头合金大电流分断相变层的显微组织控制[J].西安交通大学学报,1997,31(3):65-70. |
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| 作者姓名： | 杨志懋 崔建国 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 观察了真空灭弧室分断大电流后ＣｕＣｒ５０触头材料的表面熔化层的形貌和显微组织特点，建立了分断过程中触头表面温度场数值计算模型．结果表明：触头材料在分断大电流过程中表面形貌和显微组织发生了显著的变化；数值计算显示电流过零时刻触头表面仍保持较高的温度，此时的耐电压强度是能否成功分断的主要因素．由此提出了提高触头材料分断大电流能力的措施
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| 关 键 词： | 真空断路器 触头 表面 分断 显微组织 |
Study of Phase Transformation in Melt Layer of CuCr50Contact Material after Interrupting Operations |
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| Yang,Zhimao,Cui,Jianguo,Wang,Yaping,Ding,Bingjun,Wang,Xiaotian.Study of Phase Transformation in Melt Layer of CuCr50Contact Material after Interrupting Operations[J].Journal of Xi'an Jiaotong University,1997,31(3):65-70. |
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| Authors: | Yang Zhimao Cui Jianguo Wang Yaping Ding Bingjun Wang Xiaotian |
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| Abstract: | The surface microstructure of CuCr50 contact material for vacuum interrupters after high current interrupting was investigated and a heat conduction model of surface temperature of contact was established. Experimental results show that the surface morphology and microstructure of contact changed greatly in the process of high current interrupting. Numerical computation reveals that the surface of contacts after current natural zero maintain high temperature. The interrupting capability of contacts depends strongly on the dielectric strength of contact material at high temperature. |
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| Keywords: | vacuum interrupter contact surface interrupting microstructure |
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