| 内场限环结构LDMOST的耐压分析 |
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| 引用本文： | 唐本奇 高玉民. 内场限环结构LDMOST的耐压分析[J]. 西安交通大学学报, 1997, 31(9): 67-71 |
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| 作者姓名： | 唐本奇 高玉民 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 文章讨论了内场限环结构ＬＤＭＯＳＴ的参数优化和器件耐压问题，采用直接积分的方法推导出内场限环表面掺杂浓度的精确优化公式．同时，对ＬＤＭＯＳＴ的优化结构开展了耐压分析．与国外同类工作比较，此方法简便直观，计算结果与二维数值模拟结果符合得较好．
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| 关 键 词： | LDMOST 内场限环 表面掺杂浓度 击穿电压 |
Analysis of Breakdown Voltage in LDMOST Transistors Using Internal Field Rings |
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| Tang Benqi Gao Yuming Luo Jinsheng. Analysis of Breakdown Voltage in LDMOST Transistors Using Internal Field Rings[J]. Journal of Xi'an Jiaotong University, 1997, 31(9): 67-71 |
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| Authors: | Tang Benqi Gao Yuming Luo Jinsheng |
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| Abstract: | In this paper, the high voltage behavior of the LDMOST with internal field rings is investigated by using analytical approach, and the parameters of the internal field rings are optimized. Expressions of the breakdown voltage of the optimal device structure are derived. The accuracy of the analytical expressions is verified by comparison with 2 D simulation results. |
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| Keywords: | lateral diffusion MOS transistor internal field ring surface doping concentration breakdown voltage |
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